Gallium nitride (GaN) semiconductor high electron mobility transistor (HEMT) will soon be commercially available, as recently Toshiba America Electronic Components Inc (TAEC) in collaboration with its parent company, Toshiba Corp, have made this announcement. The GaN HEMT is basically an X-band device which is mainly used for radar and medical applications.
TGI8596-50 and GaN HEMT power amplifier are internally matched and functional in the 8.5GHz to 9.6GHz range generating an output power of 50W. Major highlights of this device are three-dB compression point of 47.5dBm, linear gain of 9.0dB, and drain current of 4.5A.
According to the business development manager, Microwave, Logic & Small Signal Devices, in TAEC’s Discrete Business Unit, Homayoun Ghani, “GaN HEMT amplifiers have the potential to achieve significantly higher gain and output power than GaAs FETs at comparable frequency and input power.”
If you are looking for the samples of the 50W, X-band TGI8596-50 GaN HEMT then need not bother, as they are easily available.
