Toshiba Corporation has unveiled a new series of embedded NAND Flash memories for mobile phones, which offers configurable single-level cell (SLC) memory area and a multi-level cell (MLC) memory area to allow applications and data to be stored on the same chip. Toshiba’s new NAND Flash memory allows mobile phone manufacturers to use SLC NAND with a standard NAND interface in multi-chip packages (MCPs) to easily advantage of the lower cost and higher density of MLC NAND while optimizing NAND performance to fulfill the requirements. The mobileLBA-NAND series comes in the range from 2 to 32 gigabits (Gb). The 2Gb, 4Gb and 8Gb versions can be allocated as SLC up to their full capacity, while the 16Gb and 32 Gb versions can support up to 8Gb of SLC, which offers greater flexibility to mobile phone manufactures to allocate memory in their products. All new mobileLBA-NAND memories are integrated with a unique function, which is able to address both SLC and MLC. SLC supports high speed data read and write and it is suited to store programs for mobile phone functions. The key features of the mobileLBA-NAND are given below: 1) Manufacturers can define an SLC memory density best suited to store high speed write and read of application programs on the same chip, which is separate from an MLC area optimized for high density memory storage in each memory cell array. The SLC memory area can be set from zero to 8 Gb at maximum (for the 8Gb chip and above) by the manufacturer. 2. The new memories are fully compliant with the standard NAND flash interface, facilitating easy introduction into current products. 3. The LBA controller controls such essential functions as writing block management and ECC, minimizing any changes to the host controller specification and allowing manufacturers to quickly and cost-effectively market new and upgraded products. Image Credit:Skin IT & Arstechnica Via: WebWire
Toshiba’s mobileLBA-NAND supports both SLC and MLC memory areas in mobile phones
Posted January 26th, 2012 by admin