Finally, South Korea based Hynix Semiconductor Inc. has launched the industry’s smallest 1 gigabyte mobile DRAM to use in mobile phones. The first commercially available 1 gigabyte DRAM memory is based on company’s 66 nm process technology.
Hynix’s Mobile DRAMs are designed to fulfill the memory requirements of feature rich portable applications, which demands high memory density, high throughput and very low power dissipation features in a small form factor package. The 1GB Mobile DRAM operates at a maximum clock speed of 200 MHz, which offers data troughput of up to 1.6 GBps with a 32-bit I/O.
Hynix’s Mobile DRAMs works under in worst conditions and consumes very low power. It also extends battery life in wide range of portable electronic devices. The 1 Gb Mobile DRAM is ‘One Chip Solution‘ from Hynix, which combines SDRAM/DDR DRAM interfaces, and x16/x32 organizations on a single chip to provide the flexibility to meet with the specific needs of the customer.
The company is planning to start the mass production in the first quarter of 2008. The product would be available as ‘NAND flash Multi-Chip Package (NAND MCP)’, which combines DRAM and NAND flash in a single package. Now days Mobile DRAM is widely used in wireless and handheld devices like mobile phones, digital still and video cameras, PDAs, PMPs and GPS navigation systems.
Image Credit: Design Re use
Vi: Cellular News
