Again Fujitsu Microelectronics Asia Pvt. Ltd has unveiled two FRAM ICs to expand its product range. Fujitsu’s new FRAM are featured with high-speed writing and the high number of available write cycles allows its application to store event counts or parameters and log every event in office equipment.
The MB85R2001 and MB85R2002 are featured with non-volatile memory with high-speed data writing, low power consumption and the ability to provide a high number of write cycles. The Fujitsu FRAM write mechanism ensures that data, which can be written to FRAM at high speed even if the power is, interrupted even temporarily, so valuable data will not be lost.
The FRAM‘s MB85R2001 is configured with 256K words x 8 bits, while the MB85R2002 is configured is 12K words x 16 bits. Both ICs are featured with access times of 100 nanoseconds and read/write cycle times of 150ns. They operate from 3V to 3.6V. FRAM’s allows 10 billion read/write cycles that corresponds to writing 30 times a second continuously for 10 years. FRAMs can also store data for more than 10 years without
The 2-Mbit FRAM products have the electrical characteristics, while Fujitsu’s 1-Mbit FRAM products (MB85R1001, MB85R1002) are packed as TSOP-48. The elimination of battery from FRAM simplifies the production processes and removes the hassles of battery replacement and maintenance in products using the Fujitsu FRAM.
Image Credit: Xanthal & Fujitsu
Via: Tech On
