Fujitsu Laboratories has developed a new high-reliability technology for high power gallium nitride (GaN), named high electron-mobility transistors (HEMT). The new technology will make the way for commercialization of high power GaN HEMTs.
The new technology will enable transistor to operate even at high temperature of 200 degrees Celsius for more than one million hours under pinch off condition with a drain voltage of 50 volts (50V). The company will use the GaN HEMTs technology for the high-speed wireless communications market, like atellite communication (VSATs), cellular base stations, WiMAX base stations, and other high-speed wireless communications infrastructure.
Fujitsu has analyzed and discovered that in GaN HEMTs a correlation exists between gate leakage current and reliability. The company observed that the increase in gate leakage current depends on the quality of crystal and the structure of GaN HEMTs. Fujitsu has improved crystal quality and optimized the layer structure to mitigate the electric field in a gallium-nitride HEMT structure with few surface traps by using its proprietary n-type GaN cap layer.
Image Credit: Data Cap
Via: Tech On
